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Register Description
70 Datasheet
2.10.12 MC_CHANNEL_0_BANK_TIMING
MC_CHANNEL_1_BANK_TIMING
MC_CHANNEL_2_BANK_TIMING
This register contains parameters that specify the bank timing parameters. These
values are in DCLK. The values in these registers are encoded where noted. All of these
values apply to commands to the same rank only.
2.10.13 MC_CHANNEL_0_REFRESH_TIMING
MC_CHANNEL_1_REFRESH_TIMING
MC_CHANNEL_2_REFRESH_TIMING
This register contains parameters that specify the refresh timings. Units are in DCLK.
Device: 4, 5, 6
Function: 0
Offset: 88h
Access as a Dword
Bit Type
Reset
Value
Description
21:17 RW 0 tWTPr. Minimum Write CAS to Precharge command delay.
16:13 RW 0 tRTPr. Minimum Read CAS to Precharge command delay.
12:9 RW 0 tRCD. Minimum delay between Activate and CAS commands.
8:4 RW 0 tRAS. Minimum delay between Activate and Precharge commands.
3:0 RW 0 tRP. Minimum delay between Precharge command and Activate command.
Device: 4, 5, 6
Function: 0
Offset: 8Ch
Access as a Dword
Bit Type
Reset
Value
Description
29:19 RW 0
tTHROT_OPPREF.
The minimum time between two opportunistic refreshes. Should be set to tRFC in
DCLKS. Zero is an invalid encoding. A value of 1 should be programmed to disable
the throttling of opportunistic refreshes. By setting this field to tRFC, current to a
single DIMM can be limited to that required to support this scenario without
significant performance impact:
• 8 panic refreshes in tREFI to one rank
• 1 opportunistic refresh every tRFC to another rank
• full bandwidth delivered by the third and fourth ranks
Platforms that can supply peak currents to the DIMMs should disable opportunistic
refresh throttling for max performance.
18:9 RW 0
tREFI_8.
Average periodic refresh interval divided by 8.
8:0 RW 0
tRFC.
Delay between the refresh command and an activate or refresh command.
- Datasheet, Volume 2 1
- Contents 3
- 4 Datasheet 4
- Datasheet 5 5
- 6 Datasheet 6
- Datasheet 7 7
- 8 Datasheet 8
- Revision History 9
- 10 Datasheet 10
- 1 Introduction 11
- Introduction 12
- 12 Datasheet 12
- 1.2 References 13
- 14 Datasheet 14
- 2 Register Description 15
- 2.3 Device Mapping 17
- Control Registers 24
- Address Registers 25
- Rank Registers 26
- Thermal Control Registers 27
- 2.5 PCI Standard Registers 36
- Identification Register 38
- Express space 39
- 2.6.1 SAD_PAM0123 41
- 2.6.2 SAD_PAM456 43
- 2.6.3 SAD_HEN 44
- 2.6.4 SAD_SMRAM 44
- 2.6.5 SAD_PCIEXBAR 45
- 19:6 RW 46
- 2:1 RW 46
- 2.7 Intel QPI Link Registers 47
- 2.8.2 MC_STATUS 49
- 13:12 RW0C 50
- 11:0 RW0C 50
- 2.8.4 MC_SMI_SPARE_CNTRL 51
- 2.8.5 MC_RESET_CONTROL 51
- 2.8.6 MC_CHANNEL_MAPPER 52
- 2.8.7 MC_MAX_DOD 53
- 2.8.8 MC_RD_CRDT_INIT 54
- 2.8.9 MC_CRDT_WR_THLD 55
- 2.8.10 MC_SCRUBADDR_LO 55
- 2.8.11 MC_SCRUBADDR_HI 56
- 29:28 RW 58
- 25:24 RW 58
- 21:20 RW 58
- 17:16 RW 58
- 13:12 RW 58
- Registers 59
- MC_CHANNEL_1_DIMM_INIT_CMD 60
- MC_CHANNEL_2_DIMM_INIT_CMD 60
- MC_CHANNEL_1_DIMM_INIT_PARAMS 61
- MC_CHANNEL_2_DIMM_INIT_PARAMS 61
- MC_CHANNEL_1_DIMM_INIT_STATUS 62
- MC_CHANNEL_2_DIMM_INIT_STATUS 62
- 2.10.5 MC_CHANNEL_0_DDR3CMD 63
- MC_CHANNEL_1_DDR3CMD 63
- MC_CHANNEL_2_DDR3CMD 63
- 3:2 RW 0 64
- 31:16 RW 0 64
- 15:0 RW 0 64
- 23:20 RW 0 65
- 19:16 RW 0 65
- 7:0 RW 0 65
- MC_CHANNEL_1_RANK_TIMING_A 66
- MC_CHANNEL_2_RANK_TIMING_A 66
- 18:15 RW 0 67
- 14:11 RW 0 67
- 10:7 RW 0 67
- 6:4 RW 0 68
- 3:1 RW 0 68
- MC_CHANNEL_1_RANK_TIMING_B 69
- MC_CHANNEL_2_RANK_TIMING_B 69
- 29:19 RW 0 70
- 18:9 RW 0 70
- 8:0 RW 0 70
- MC_CHANNEL_1_WAQ_PARAMS 75
- MC_CHANNEL_2_WAQ_PARAMS 75
- MC_CHANNEL_1_ADDR_MATCH 81
- MC_CHANNEL_2_ADDR_MATCH 81
- 31:0 RW 0 82
- 2:1 RW 0 82
- Datasheet 83 83
- Register Description 83
- 26:24 RW 0 87
- 23:0 RW 0 87
- 13:4 RW 0 90
- 3:0 RW 0 90
- 2.13 Memory Thermal Control 92
- Throttling (CLTT) 93
- 2.14.2 MC_DIMM_CLK_RATIO 98
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